Datasheet Summary
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CoolMOS Power MOSFET
IXKN 75N60C
N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET
VDSS 600 V
ID25 75 A
RDS(on) 35 mΩ
Preliminary
MOSFET Symbol VDSS VGS ID25 ID90 dv/dt EAS EAR TC = 25°C TC = 90°C VDS < VDSS; IF ≤ 100A;diF/dt≤ 200A/µs TVJ = 150°C ID = 10 A; L = 36 mH; TC = 25°C ID = 20 A; L = 5 µH; TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings miniBLOC, SOT-227 B E72873
600 ±20 75 50 6 1.8 1
V V A A V/ns
S D G = Gate S = Source D = Drain
J mJ
Either source terminal at miniBLOC can be used as main or kelvin source
Symbol
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 30 3.5 0.1 35 mΩ 5.5...