Datasheet Summary
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Advanced Technical Information
CoolMOS Power MOSFET in ISOPLUS247TM Package
N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base
VDSS IXKR 40N60C 600 V
ID25 38 A
RDS(on) 70 mΩ
MOSFET Symbol VDSS VGS ID25 ID90 dv/dt EAS EAR TC = 25°C TC = 90°C VDS < VDSS; IF ≤ 50A;diF/dt≤ 200A/µs TVJ = 150°C ID = 10 A; L = 36 mH; TC = 25°C ID = 20 A; L = 5 µH; TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 600 ±20 38 25 6 1.8 1 V V A A V/ns
ISOPLUS 247TM E153432
Isolated base-
G = Gate
D = Drain
S = Source
- Patent pending
Features
J mJ q
Symbol
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise...