IXKR25N80C Description
Advanced Technical Information .. IF ≤ 17 A;diF /dt≤ 100 A/µs TVJ = 150°C ID = 4.
IXKR25N80C Key Features
- ISOPLUS247 package with DCB Base
- Electrical isolation towards the heatsink
- Low coupling capacitance to the heatsink for reduced EMI
- High power dissipation
- High temperature cycling capability of chip on DCB
- JEDEC TO247AD patible
- Easy clip assembly
- fast CoolMOS power MOSFET
- 3rd generation
- High blocking capability