IXKR40N60C Description
IF ≤ 50A;diF/dt≤ 200A/µs TVJ = 150°C ID = 10.
IXKR40N60C Key Features
- Electrical isolation towards the heatsink
- Low coupling capacitance to the heatsink for reduced EMI
- High power dissipation
- High temperature cycling capability of chip on DCB
- JEDEC TO247AD patible
- Easy clip assembly fast CoolMOS power MOSFET
- 2nd generation
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped inductive switching (UIS)