IXTA1N100 Description
+150 G S D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Mounting torque 1.13/10 Nm/lb.in.
IXTA1N100 is High Voltage MOSFET manufactured by IXYS.
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
IXTA1N100 | N-Channel MOSFET |
IXYS |
IXTA1N100P | Power MOSFET |
Inchange Semiconductor |
IXTA1N100P | TO-263 N-Channel MOSFET |
+150 G S D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Mounting torque 1.13/10 Nm/lb.in.