Datasheet Details
| Part number | IXTA1N100 |
|---|---|
| Manufacturer | IXYS (now Littelfuse) |
| File Size | 46.64 KB |
| Description | High Voltage MOSFET |
| Datasheet |
 IXTA1N100 Datasheet
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| Part number | IXTA1N100 |
|---|---|
| Manufacturer | IXYS (now Littelfuse) |
| File Size | 46.64 KB |
| Description | High Voltage MOSFET |
| Datasheet |
IXTA1N100 Datasheet
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Advanced Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 1N100 IXTP 1N100 VDSS ID25 RDS(on) = 1000 V = 1.5 A = 11 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM Maximum Ratings 1000 1000 ±20 ±30 1.5 6 1.5 V V V V A A A mJ mJ V/ns W °C °C °C TO-220AB (IXTP) GD D (TAB) S TO-263 AA (IXTA) TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 18 Ω TC = 25°C 6 200 3 54 -55 ...
+150 150 -55 ...
+150 G S D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Mounting torque 1.13/10 Nm/lb.in.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IXTA1N100 | N-Channel MOSFET | INCHANGE |
 |
IXTA1N100P | Power MOSFET | IXYS |
|
IXTA1N100P | TO-263 N-Channel MOSFET | INCHANGE |
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