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IXTK120N25P - PolarHT Power MOSFET

Key Features

  • z International Standard Package z Fast Intrinsic Diode z Avalanche Rated z Low Package Inductance Advantages z Easy to Mount z Space Savings z High Power Density.

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Full PDF Text Transcription for IXTK120N25P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTK120N25P. For precise diagrams, and layout, please refer to the original PDF.

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTK120N25P Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL ...

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bol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C Terminal Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque TO-264 Maximum Ratings 250 V 250 V ± 20 V ± 30 V 120 A 75 A 300 A 60 A 2.5 J 10 700 -55 ... +150 150 -55 ... +150 300 260 V/ns W °C °C °C °C °C 1.13/10 10 Nm/lb.in.

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