IXZ12210N50L Description
IXZ12210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & munications Applications Note: All data is per the IXZ1210N50L single ended device unless otherwise Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; Tc = 25°C, Derate 6.0W/°C...
IXZ12210N50L Key Features
- IXYS RF Low Capacitance Z-MOSTM
- Very low insertion inductance (<2nH)
- High Performance RF Package
- Easy to mount-no insulators needed
- Standard RF Package