IXZ2210N50L, IXZ210N50L Datasheet - IXYS Corporation

IXZ2210N50L N-Channel Linear 175MHz RF MOSFET

IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications Note: All data is per the IXZ210N50L single ended device unless otherwise noted. Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C.

IXZ2210N50L Features

* 150V (operating) 300 & 550 Watts 175MHz PDC PDHS PDAMB RthJC RthJHS www.DataSheet4U.com Tc = 25°C, Derate 6.0W/°C above 25°C Tc = 25°C 470 235 10 0.32 0.57 min. typ. VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight VGS = 0 V, ID = 4 ma VDS = VGS, ID = 250µΑ VGS = ±20 VDC, VDS = 0 VDS =

IXZ210N50L_IXYSCorporation.pdf