IXZ308N120 - Z-MOS RF Power MOSFET

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IXYS Corporation

Part number	IXZ308N120
Manufacturer	IXYS Corporation
File Size	179.45 KB
Description	Z-MOS RF Power MOSFET
Datasheet	IXZ308N120 Datasheet
Additional preview pages of the IXZ308N120 datasheet.

min. VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight 1.6mm(0.063 in) from case for 10 s VGS = 0 V, ID = 4 ma VDS = VGS, ID = 250µΑ VGS = ±20 VDC, VDS = 0 VDS = 0.8VDSS VGS=0 TJ = 25C TJ =125C typ. max. V 6.5 ±100 50 1 V nA µA mA Ω S +175 °C °C + 175 °C °C g 1200 3.5.
Isolated Substrate.
high isolation voltage (>2500V).
excellent thermal transfer.
Increased temperature and power.

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Published: Oct 29, 2009 |