IXZ308N120 Description
IXZ308N120 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Linear Switch 175MHz Mode RF RF MOSFET MOSFET Lo Capacitance Low Capacitance Z-MOS Z-MOS MOSFET MOSFET Process Process TMTM Optimized for RF Linear Operation Operation Ideal for Class AB C, D, & C, &E Broadcast Applications & munications Applications Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C;.
IXZ308N120 Key Features
- Isolated Substrate
- high isolation voltage (>2500V)
- excellent thermal transfer
- Increased temperature and power
- cycling capability IXYS advanced Z-MOS process Low gate charge and capacitances easier to drive faster switching Low RDS
- Optimized for RF and high speed
- Easy to mount-no insulators needed
- High power density