Key Features
- Drain Current –ID= 9.5A@ TC=25℃
- Drain Source Voltage
- Static Drain-Source On-Resistance
- Minimum Lot-to-Lot variations for robust device performance
- Designed for high efficiency switch mode power supply
Datasheets by Manufacturer
| Part Number |
Manufacturer |
Description |
|
10N60B
|
CHONGQING PINGYANG |
N-CHANNEL MOSFET |
|
10N60A
|
Fairchild Semiconductor |
Advanced Power MOSFET |
|
10N60B
|
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
10N60
|
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
10N60K
|
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
10N60NZ
|
Fairchild Semiconductor |
N-Channel MOSFET |
|
10N60-HC
|
Unisonic Technologies |
N-CHANNEL MOSFET |
|
10N60H
|
CHONGQING PINGYANG |
N-CHANNEL MOSFET |
|
10N60Z-Q
|
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
10N60K-MTQ
|
Unisonic Technologies |
N-CHANNEL POWER MOSFET |