Key Features
- Drain Current -ID= 9.5A@ TC=25℃
- Drain Source Voltage- : VDSS= 600V(Min)
- Static Drain-Source On-Resistance : RDS(on) = 0.73Ω(Max)
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- Designed for high efficiency switch mode power supply.
Datasheets by Manufacturer
| Part Number |
Manufacturer |
Description |
|
10N60M2
|
STMicroelectronics |
N-channel Power MOSFET |
|
10N60
|
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
10N60A
|
Fairchild Semiconductor |
Advanced Power MOSFET |
|
10N60B
|
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
10N60F
|
CHONGQING PINGYANG |
N-CHANNEL MOSFET |
|
10N60H
|
CHONGQING PINGYANG |
N-CHANNEL MOSFET |
|
10N60B
|
CHONGQING PINGYANG |
N-CHANNEL MOSFET |
|
10N60
|
CHONGQING PINGYANG |
N-CHANNEL MOSFET |
|
10N60K-MT
|
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
10N60K
|
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
