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Inchange Semiconductor

2N3767 Datasheet Preview

2N3767 Datasheet

Silicon NPN Power Transistors

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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N3767
DESCRIPTION
·Continuous Collector Current IC= 4A
·Collector Power Dissipation-
: PC= 20W @TC= 25
APPLICATIONS
·Designed for power amplifier and medium speed
applications.
switching
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100 V
VCEO
Collector-Emitter Voltage
80 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
4A
IB Base Current-Continuous
2A
PC Collector Power Dissipation@TC=2520
W
TJ Junction Temperature
200
Tstg Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
8.75
UNIT
/W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




Inchange Semiconductor

2N3767 Datasheet Preview

2N3767 Datasheet

Silicon NPN Power Transistors

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N3767
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A
VBE(on) Base-Emitter On Voltage
IC= 1A; VCE= 10V
ICEO Collector Cutoff Current
ICBO Collector Cutoff Current
IEBO Emitter Cutoff Current
VCE= 80V; IB= 0
VCB= 100V; IE= 0
VCB= 100V; IE= 0,TC=150
VEB= 6V; IC= 0
hFE-1
DC Current Gain
IC= 50mA ; VCE= 5V
hFE-2
DC Current Gain
IC= 0.5A; VCE= 5V
hFE-3
DC Current Gain
IC= 1A; VCE= 10V
fT Current Gain-Bandwidth Product IC= 0.5A; VCE= 10V; f=10MHz
MIN MAX UNIT
80 V
1.0 V
2.5 V
1.5 V
0.7 mA
0.1
1.0
mA
0.75 mA
30
40 160
20
10 MHz
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 2N3767
Description Silicon NPN Power Transistors
Maker Inchange Semiconductor
Total Page 2 Pages
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