Download 2N6050 Datasheet PDF
2N6050 page 2
Page 2

2N6050 Description

·Built-in Base-Emitter Shunt Resistors ·High DC current gain ·plement to type 2N6057 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Darlingtion Pow.