2N6050
2N6050 is Silicon PNP Power Transistors manufactured by Inchange Semiconductor.
DESCRIPTION
- Built-in Base-Emitter Shunt Resistors
- High DC current gain
- plement to type 2N6057
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for general purpose amplifier and low frequency switching applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-60 V
VCEO Collector-Emitter Voltage
-60 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current -Continuous
-12 A
ICM Collector Current-Peak
-20 A
IB Base Current
-0.2 A
PC Collector Power Dissipation@TC=25℃ 150
TJ Junction Temperature Tstg Storage Temperature
150 -65~150
℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX 1.17
UNIT ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Darlingtion...
