2N6609 Silicon PNP Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2N6609 .
Excellent Safe Operating Area. High DC Current Gain-hFE=15(Min)@IC = -8A. Low Saturation Voltage- : VCE(sat)= -1. C.

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Datasheet Specifications

Part number: 2N6609
Manufacturer: Inchange Semiconductor
File Size: 137.67 KB
Datasheet: 2N6609-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for high power audio ,disk head positioners and other linear applications, which can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltag

2N6609 Distributors

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2N6609 Silicon PNP Power Transistor Inchange Semiconductor

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