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2SB1100 Datasheet - Inchange Semiconductor

2SB1100 Silicon PNP Power Transistors

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) *High DC Current Gain- : hFE= 1000(Min)@ IC= -10A *Complement to Type 2SD1591 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for audio frequency power amplifie.

2SB1100-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SB1100

Manufacturer:

Inchange Semiconductor

File Size:

218.34 KB

Description:

Silicon pnp power transistors.

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2SB1100 Silicon PNP Power Transistors Inchange Semiconductor