2SB817

The 2SB817 is Silicon PNP Power Transistor designed by Inchange Semiconductor.

Product Overview

Inchange Semiconductor

Datasheet Details

Part number	2SB817
Manufacturer	Inchange Semiconductor
File Size	222.29 KB
Description	Silicon PNP Power Transistor
Datasheet	2SB817_InchangeSemiconductor.pdf
Additional preview pages of the 2SB817 datasheet.

Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) Good Linearity of hFE High Current Capability Wide Area of Safe Operation Complement to Type 2SD1047 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Recommend for 60W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage

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Published: Oct 25, 2013 |