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2SC1875 Datasheet Silicon NPN Power Transistors

Manufacturer: Inchange Semiconductor

General Description

·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 500V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Automotive ignition ·Switching regulator ·Motor control applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 3.5 A 50 W -65~150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Rresistance,Junction to Case 2.5 ℃/W isc website: www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1875 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A;

IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A;

IB= 0.6A ICBO Collector Cutoff Current VCB= 1000V, IE= 0 ICEO Collector Cutoff Current VCE= 500V, IB= 0 IEBO Emitter Cutoff Current VEB= 5V;

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1875.