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Inchange Semiconductor
Inchange Semiconductor

2SC2248 Datasheet Preview

2SC2248 Datasheet

Power Transistor

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2SC2248 pdf
INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SC2248
DESCRIPTION
·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min)
·High Switching Speed
APPLICATIONS
·Power switching
·Power amplification
·Power driver
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
i.cnCollector-Base Voltage
.iscsemCollector-Emitter Voltage
wwwEmitter-Base Voltage
MAX UNIT
450 V
400 V
5V
Collector Current-Continuous
8A
ICM Collector Current-Peak
16 A
IB Base Current-Continuous
Collector Power Dissipation
PC @TC=25
Tj Junction Temperature
3A
40 W
175
Tstg Storage Temperature Range
-65~175
isc Websitewww.iscsemi.cn



Inchange Semiconductor
Inchange Semiconductor

2SC2248 Datasheet Preview

2SC2248 Datasheet

Power Transistor

No Preview Available !

2SC2248 pdf
INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SC2248
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustainig Voltage IC= 100mA; L= 25mH
400
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 0.6A
hFE DC Current Gain
IC= 3A; VCE= 5V
10
ICBO Collector Cutoff Current
VCB= 450V; IE= 0
TC=125
ICEO Collector Cutoff Current
i.cnIEBO Emitter Cutoff Current
.iscsemSwitching Times
wwwtr Rise Time
VCE= 400V; IB= 0
VEB= 5V; IC= 0
tstg Storage Time
IC=3A; IB1=- IB2= 0.6A
tf Fall Time
1.2 V
1.5 V
1.0
4.0
mA
5.0 mA
1.0 mA
1.0 μs
2.0 μs
1.0 μs
isc Websitewww.iscsemi.cn


Part Number 2SC2248
Description Power Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
PDF Download
2SC2248 pdf
2SC2248 Datasheet PDF
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