Datasheet Details
| Part number | 2SC2248 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.66 KB |
| Description | Power Transistor |
| Download | 2SC2248 Download (PDF) |
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| Part number | 2SC2248 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.66 KB |
| Description | Power Transistor |
| Download | 2SC2248 Download (PDF) |
|
|
|
·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3 A 40 W 175 ℃ Tstg Storage Temperature Range -65~175 ℃ 2SC2248 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2248 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustainig Voltage IC= 50mA;
L= 25mH 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
isc Silicon NPN Power Transistor.
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