Datasheet Details
| Part number | 2SC2983 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 252.46 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SC2983 Download (PDF) |
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| Part number | 2SC2983 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 252.46 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SC2983 Download (PDF) |
|
|
|
·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and driver stage amplifier applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC IB PC TJ Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation Junction Temperature Tstg Storage Temperature Range 160 V 160 V 5 V 1.5 A 0.3 A 15 W 150 ℃ -55~150 ℃ 2SC2983 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA;
IB= 50mA VBE(on) Base-Emitter On Voltage VCE= 5V;
isc Silicon NPN Power Transistor.
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