Datasheet Details
| Part number | 2SC3371 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.71 KB |
| Description | Power Transistor |
| Download | 2SC3371 Download (PDF) |
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| Part number | 2SC3371 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.71 KB |
| Description | Power Transistor |
| Download | 2SC3371 Download (PDF) |
|
|
|
· ·Collector-Emiiter Sustaining Voltage- : VCEO(SUS)= 500V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 8A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 200 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.5A;
L= 25mH VCE(sat) Collector-Emitter Saturation Voltage IC= 8A;
isc Silicon NPN Power Transistor 2SC3371.
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| 2SC3353 | Power Transistor |
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| 2SC3356 | Silicon NPN Transistor |
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| 2SC3388 | Power Transistor |
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| 2SC3094 | Silicon NPN Power Transistor |
| 2SC3121 | Silicon NPN RF Transistor |
| 2SC3122 | Silicon NPN RF Transistor |