Datasheet Details
| Part number | 2SC3563 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.22 KB |
| Description | Power Transistor |
| Download | 2SC3563 Download (PDF) |
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| Part number | 2SC3563 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.22 KB |
| Description | Power Transistor |
| Download | 2SC3563 Download (PDF) |
|
|
|
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ 40 W 2 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3563 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
isc Silicon NPN Power Transistor.
| Part Number | Description |
|---|---|
| 2SC3561 | N-Channel MOSFET Transistor |
| 2SC3565 | Power Transistor |
| 2SC3566 | Power Transistor |
| 2SC3502 | Silicon NPN Power Transistor |
| 2SC3512 | Silicon NPN RF Transistor |
| 2SC3514 | Silicon NPN Power Transistor |
| 2SC3518-Z | Silicon NPN Power Transistor |
| 2SC3544 | Silicon NPN RF Transistor |
| 2SC3545 | Silicon NPN RF Transistor |
| 2SC3547 | Silicon NPN RF Transistor |