| Part number | 2SC3565 |
|---|---|
| Datasheet | 2SC3565_InchangeSemiconductor.pdf |
| File Size | 191.00 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Power Transistor |
|
|
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high frequency high voltage amplifier and TV viedo output applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V...
See all Inchange Semiconductor datasheets
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|---|---|
| 2SC3561 | N-Channel MOSFET Transistor |
| 2SC3563 | Power Transistor |
| 2SC3566 | Power Transistor |
| 2SC3502 | Silicon NPN Power Transistor |
| 2SC3512 | Silicon NPN RF Transistor |
| 2SC3514 | Silicon NPN Power Transistor |
| 2SC3518-Z | Silicon NPN Power Transistor |
| 2SC3544 | Silicon NPN RF Transistor |
| 2SC3545 | Silicon NPN RF Transistor |
| 2SC3547 | Silicon NPN RF Transistor |
