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2SC3565 - Power Transistor

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Part number 2SC3565
Manufacturer Inchange Semiconductor
File Size 191.00 KB
Description Power Transistor
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Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) Good Linearity of hFE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high frequency high voltage amplifier and TV viedo output applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V

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