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2SC3563 - Power Transistor

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V (Min) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Switching regulator and high voltage switching applications.

High speed DC-DC converter appli

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ 40 W 2 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3563 isc website：www.iscsemi.