| Part number | 2SC3563 |
|---|---|
| Datasheet | 2SC3563_InchangeSemiconductor.pdf |
| File Size | 195.22 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Power Transistor |
|
|
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications.
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SC3561 | N-Channel MOSFET Transistor |
| 2SC3565 | Power Transistor |
| 2SC3566 | Power Transistor |
| 2SC3502 | Silicon NPN Power Transistor |
| 2SC3512 | Silicon NPN RF Transistor |
| 2SC3514 | Silicon NPN Power Transistor |
| 2SC3518-Z | Silicon NPN Power Transistor |
| 2SC3544 | Silicon NPN RF Transistor |
| 2SC3545 | Silicon NPN RF Transistor |
| 2SC3547 | Silicon NPN RF Transistor |
