Datasheet Details
| Part number | 2SC3561 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.40 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2SC3561-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor 2SC3561.
| Part number | 2SC3561 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.40 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2SC3561-InchangeSemiconductor.pdf |
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 4 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 0.5 A 20 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
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