Datasheet Details
| Part number | 2SD1044 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 219.38 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Download | 2SD1044 Download (PDF) |
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| Part number | 2SD1044 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 219.38 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Download | 2SD1044 Download (PDF) |
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|
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·High DC Current Gain : hFE= 700(Min.)@ IC= 1A, VCE= 4V ·High Collector-Emitter Breakdown Voltage- : V(BR) CEO= 80V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCER Collector-Emitter Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1044 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCER Collector-Emitter Breakdown Voltage IC= 50mA, RBE= 1kΩ V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A, IB= 30mA ICBO Collector Cutoff current VCB= 100V, IE= 0 IEBO Emitter Cutoff Current VEB= 6V;
IC= 0 hFE DC Current Gain IC= 1A;
isc Silicon NPN Darlington Power Transistor.
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