Datasheet Details
| Part number | 2SD1141 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.52 KB |
| Description | Power Transistor |
| Download | 2SD1141 Download (PDF) |
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| Part number | 2SD1141 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.52 KB |
| Description | Power Transistor |
| Download | 2SD1141 Download (PDF) |
|
|
|
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min) ·High DC Current Gain : hFE= 500(Min)@IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage switching, igniter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1141 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD1141 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN IC= 30mA;
L= 10mH, PW= 50μ VCEO(SUS) Collector-Emitter Sustaining Voltage s;
isc Silicon NPN Darlington Power Transistor.
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