Datasheet Details
| Part number | 2SD1170 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.27 KB |
| Description | Power Transistor |
| Download | 2SD1170 Download (PDF) |
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| Part number | 2SD1170 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.27 KB |
| Description | Power Transistor |
| Download | 2SD1170 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min.) ·Low Collector Saturation Voltage ·High DC Current Gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Driver for solenoid,motor and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO IC Emitter-Base Voltage Collector Current-Continuous 6 V 6 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 1 A 70 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1170 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 3mA;
IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.
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| 2SD1172 | Silicon NPN Transistor |
| 2SD1173 | Silicon NPN Transistor |
| 2SD1113 | Silicon NPN Power Transistor |
| 2SD1117 | Silicon NPN Power Transistor |
| 2SD1118 | Silicon NPN Power Transistor |
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| 2SD1154 | Silicon NPN Power Transistor |