Datasheet Details
| Part number | 2SD1531 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.14 KB |
| Description | Power Transistor |
| Download | 2SD1531 Download (PDF) |
|
|
| Part number | 2SD1531 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.14 KB |
| Description | Power Transistor |
| Download | 2SD1531 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF output amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICP Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 4 A 5 W 1.2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1531 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 2mA;
isc Silicon NPN Power Transistor.
| Part Number | Description |
|---|---|
| 2SD1530 | Power Transistor |
| 2SD1533 | Silicon NPN Transistor |
| 2SD1500 | Power Transistor |
| 2SD1509 | Silicon NPN Power Transistor |
| 2SD1516 | Silicon NPN Transistor |
| 2SD1517 | Power Transistor |
| 2SD1518 | Power Transistor |
| 2SD1525 | Silicon NPN Darlington Power Transistor |
| 2SD1528 | Silicon NPN Power Transistor |
| 2SD1543 | Power Transistor |