2SD1602 Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor 2SD1602 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). High DC Current Gain : hFE= 1000(Min) @IC= 2A. Complement to Type 2SB1102.

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Datasheet Specifications

Part number: 2SD1602
Manufacturer: Inchange Semiconductor
File Size: 210.85 KB
Datasheet: 2SD1602_InchangeSemiconductor.pdf
Description: Power Transistor

Applications

* Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICP Collector Curr

2SD1602 Distributors

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2SD1602 Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SD1602-like datasheet