Datasheet Details
| Part number | 2SD1663 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.77 KB |
| Description | Power Transistor |
| Download | 2SD1663 Download (PDF) |
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| Part number | 2SD1663 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.77 KB |
| Description | Power Transistor |
| Download | 2SD1663 Download (PDF) |
|
|
|
·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1300V (Min.) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCES Collector- Emitter Voltage 1300 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7.7 V IC Collector Current-Continuous 5 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1663 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.5A;
L= 50mH VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A;
isc Silicon NPN Power Transistor.
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