Datasheet Details
| Part number | 2SD2237 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 243.13 KB |
| Description | Power Transistor |
| Download | 2SD2237 Download (PDF) |
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| Part number | 2SD2237 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 243.13 KB |
| Description | Power Transistor |
| Download | 2SD2237 Download (PDF) |
|
|
|
·High DC Current Gain: hFE = 2000(Min)@ IC= 2A ·Low Collector Saturation Voltage: VCE(sat) = 2.0V(Max.) @IC= 5A ·Complement to Type 2SB1478 APPLICATIONS ·Designed for power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage w ww s c s .i VALUE 100 V 100 V 5 V 8 A 60 W UNIT n c .
i m e VEBO Emitter-Base Voltage IC Collector Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature PC Tj 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor.
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