Datasheet Details
| Part number | 2SD363 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.62 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SD363 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD363 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.62 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SD363 Download (PDF) |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector Power Dissipation- : PC= 40W(Max)@ TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B/W TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD363 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 20mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
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