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2SD380 - Silicon NPN Power Transistor

Description

High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

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Full PDF Text Transcription

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isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 5 A ICM Collector Current-Peak 7 A IBM Base Current-Peak PC Collector Power Dissipation @ TC≤75℃ TJ Junction Temperature 3.5 A 50 W 130 ℃ Tstg Storage Temperature Range -65~130 ℃ 2SD380 isc website：www.iscsemi.
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