power transistor.
*Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
*Good Linearity of hFE
*Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@IC= 4A
*Complement to Type 2SB869
*Minimum Lot-to-Lot variations for robust device
performan.
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