3DD207I
3DD207I is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min.)
- Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC= 3A
APPLICATIONS
- Designed for auto amplifier application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200 V
VCEO
Collector-Emitter Voltage
200 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
5A
PC Collector Power Dissipation@TC=75℃ 50
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-55~150 ℃ isc website： .iscsemi. isc & iscsemi is registered trademark
INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50m A; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC=...
