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3DD207I - Silicon NPN Power Transistor

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Part number 3DD207I
Manufacturer Inchange Semiconductor
File Size 145.74 KB
Description Silicon NPN Power Transistor
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 3A APPLICATIONS Designed for auto amplifier application.

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