Part 3DD207I
Description Silicon NPN Power Transistor
Category Transistor
Manufacturer Inchange Semiconductor
Size 145.74 KB
Inchange Semiconductor
3DD207I

Overview

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 3A.