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BUY24 Datasheet

Silicon NPN Power Transistor

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isc Silicon NPN Power Transistor
BUY24
DESCRIPTION
·
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.)
·Low Collector Saturation Voltage-
: VCE(sat)= 1.0V@ IC= 5A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use switching and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@TC75
Tj
Junction Temperature
5
A
15
W
150
Tstg
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance, Junction to Case
5.0 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




Inchange Semiconductor

BUY24 Datasheet Preview

BUY24 Datasheet

Silicon NPN Power Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1m A; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 2A; IB= 0.2A
VBE(sat)-2 Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
hFE-1
DC Current Gain
IC= 5A; IB= 0.5A
VCB=60V; IE= 0
VCB=60V; IE= 0; TC= 125
IC= 0.5A ; VCE= 2V
hFE-2
DC Current Gain
IC= 2A; VCE= 2V
hFE-3
DC Current Gain
IC= 5A; VCE= 2V
BUY24
MIN TYP. MAX UNIT
60
V
120
V
6
V
0.6
V
1.0
V
1.2
V
1.3
V
10 μA
1.0 mA
45
40
40
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number BUY24
Description Silicon NPN Power Transistor
Maker Inchange Semiconductor
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