Datasheet4U Logo Datasheet4U.com

KSD5011 Silicon NPN Power Transistor

KSD5011 Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5011 .
High Breakdown Voltage- : VCBO= 1500V (Min). High Switching Speed. High Reliability. Built-in Damper Diode APPLICATIONS. Designe.

KSD5011 Applications

* Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6V IC Collector Current- Continuous 3.5 A ICP Collector Current

📥 Download Datasheet

Preview of KSD5011 PDF
datasheet Preview Page 2

Datasheet Details

Part number
KSD5011
Manufacturer
Inchange Semiconductor
File Size
131.78 KB
Datasheet
KSD5011-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

📁 Related Datasheet

  • KSD5013 - NPN Transistor (Samsung semiconductor)
  • KSD5015 - NPN Transistor (Samsung semiconductor)
  • KSD5017 - NPN Transistor (Samsung semiconductor)
  • KSD5018 - NPN Transistor (Fairchild Semiconductor)
  • KSD5003 - NPN Triple Diffused Planar Silicon Transistor (Samsung semiconductor)
  • KSD5004 - NPN Triple Diffused Planar Silicon Transistor (Samsung semiconductor)
  • KSD5005 - NPN Triple Diffused Planar Silicon Transistor (Samsung semiconductor)
  • KSD5007 - NPN Triple Diffused Planar Silicon Transistor (Samsung semiconductor)

📌 All Tags

Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor KSD5011-like datasheet