Datasheet Details
| Part number | MJD117 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 250.42 KB |
| Description | Silicon PNP Power Transistor |
| Download | MJD117 Download (PDF) |
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| Part number | MJD117 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 250.42 KB |
| Description | Silicon PNP Power Transistor |
| Download | MJD117 Download (PDF) |
|
|
|
·High DC current gain ·Built-in a damper diode at E-C ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suffix) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICP Collector Current-Pulse PC Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃ TJ Junction Temperature -4 A 1.75 W 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ MJD117 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1* Collector-Emitter Saturation Voltage IC= -2A;
IB=- 8mA VCE(sat)-2* Collector-Emitter Saturation Voltage IC= -4A;
isc Silicon PNP Darlington Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
MJD117 | PNP Silicon Darlington Transistor | Fairchild Semiconductor |
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MJD117 | COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS | CDIL |
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MJD117 | PNP Transistor | JCET |
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MJD117 | Epitaxial Planar PNP Transistor | GME |
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MJD117 | Complementary Darlington Power Transistor | ON Semiconductor |
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