Datasheet4U Logo Datasheet4U.com

MJE253 - Silicon PNP Power Transistor

Description

Collector Emitter Sustaining Voltage- : VCEO(SUS) = -100 V(Min) DC Current Gain- : hFE = 40(Min) @ IC= -0.2 A Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A Complement to the NPN MJE243 Minimum Lot-to-Lot variations for robust device performan

📥 Download Datasheet

Datasheet preview – MJE253

Datasheet Details

Part number MJE253
Manufacturer Inchange Semiconductor
File Size 214.73 KB
Description Silicon PNP Power Transistor
Datasheet download datasheet MJE253 Datasheet
Additional preview pages of the MJE253 datasheet.
Other Datasheets by Inchange Semiconductor

Full PDF Text Transcription

Click to expand full text
isc Silicon PNP Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = -100 V(Min) ·DC Current Gain- : hFE = 40(Min) @ IC= -0.2 A ·Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A ·Complement to the NPN MJE243 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low power audio amplifier and low-current, high-speed switching applications.
Published: |