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6ED003L06-F2 - 200V 3-phase gate driver

Description

The devices are full bridge drivers to control power devices like MOSFET or IGBTs in 3-phase systems with a maximum blocking voltage of +600 V.

Based on the used SOI-technology there is an excellent ruggedness on transient voltages.

No parasitic thyristor structures are present in the device.

Features

  • Infineon thin-film-SOI-technology.
  • Maximum blocking voltage +600 V.
  • Output source/sink current +0.165 A/-0.375 A.
  • Insensitivity of the bridge output to negative transient voltages up to -50 V given by SOItechnology.
  • Separate control circuits for all six drivers.
  • Detection of over current and under voltage supply.
  • Externally programmable delay for fault clear after over current detection.
  • 'Shut down' of all switches during e.

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Other Datasheets by Infineon

Part Number Description
6ED003L06-C2 High voltage gate driver
6ED003L02-F2 200V 3-phase gate driver
6ED2230S12T 1200V Three Phase Gate Driver
6ED2742S01Q 160V pre-regulated three phase SOI gate driver
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Full PDF Text Transcription

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6ED003-F2 family 6ED003L02-F2 and 6ED003L06-F2 family 200 V and 600 V three-phase gate driver with Over Current Protection (OCP), Enable (EN) and Fault Features • Infineon thin-film-SOI-technology • Maximum blocking voltage +600 V • Output source/sink current +0.165 A/-0.375 A • Insensitivity of the bridge output to negative transient voltages up to -50 V given by SOItechnology • Separate control circuits for all six drivers • Detection of over current and under voltage supply • Externally programmable delay for fault clear after over current detection • 'Shut down' of all switches during error conditions • Signal interlocking of every phase to prevent crossconduction Potential applications Product summary VOFFSET (6ED003L06-F2) VOFFSET (6ED003L02-F2) IO+/- (typ.
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