6ED2230S12T Datasheet - Infineon

1200V Three Phase Gate Driver

6ED2230S12T Features

* Infineon Thin-Film-SOI technology

* Fully operational to +1200 V

* Integrated Ultra‐fast Bootstrap Diode

* Floating channel designed for bootstrap operation

* Output source/sink current capability +0.35 A/‐0.65 A

* Tolerant to negative transient vol

6ED2230S12T General Description

The 6ED2230S12T is a high voltage, high speed IGBT with three independent high side and low side referenced output channels for three phase applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS o.

6ED2230S12T Datasheet (3.25 MB)