6ED2230S12T datasheet, driver equivalent, Infineon

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6ED2230S12T Features and benefits

* Infineon Thin-Film-SOI technology
* Fully operational to +1200 V
* Integrated Ultra‐fast Bootstrap Diode
* Floating channel designed for bootstrap oper.

6ED2230S12T Application

Product summary
* VOFFSET
* VCC
* IO+/- (typ.)
* ton/off (typ.)
* Deadtime (typ.) ≤ 1200 V = 13 V .

6ED2230S12T Description

The 6ED2230S12T is a high voltage, high speed IGBT with three independent high side and low side referenced output channels for three phase applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. .

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