AIMBG120R010M1 - 1200V SiC Trench MOSFET

Product Overview

Infineon

Datasheet Details

Part number	AIMBG120R010M1
Manufacturer	Infineon
File Size	1.62 MB
Description	1200V SiC Trench MOSFET
Datasheet	AIMBG120R010M1 Datasheet
Additional preview pages of the AIMBG120R010M1 datasheet.

Product details

Description

Pin definition: Pin 1 - Gate Pin 2 - Kelvin sense contact Pin 3…7 - Source Tab - Drain Note: The source and sense pins are not exchangeable, their exchange might lead to malfunction Type AIMBG120R010M1 Package PG-TO263-7-U01 Marking AS10MM1 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.20 2024-11-12 AIMBG120R010M1 CoolSiC™ 1200 V SiC Trench MOSFET Table of contents Table

Features

VDSS = 1200 V at Tvj = -55175°C.
IDDC = 205A at TC = 25°C.
RDS(on) = 8.7 mΩ at VGS = 20 V, Tvj = 25°C.
New performance-optimized chip technology (Gen1p) with improved RDSon.
A.
Best in class switching energy for lower switching losses and reduced cooling efforts.
Lowest device capacitances for higher switching speeds and higher power density.
A combination of low Crss/Ciss ratio and high VGS(th) to avoid parasitic turn-on and en.

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Published: Jul 16, 2023 |