Datasheet Summary
CoolSiC™ 1200 V SiC Trench MOSFET
Final datasheet CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET
PG-TO263-7-HV-ND5.8
Features
- VDSS = 1200 V at Tvj = -55...175°C
- IDDC = 205A at TC = 25°C
- RDS(on) = 8.7 mΩ at VGS = 20 V, Tvj = 25°C
- New performance-optimized chip technology (Gen1p) with improved RDSon- A
- Best in class switching energy for lower switching losses and reduced cooling efforts
- Lowest device capacitances for higher switching speeds and higher power density
- A bination of low Crss/Ciss ratio and high VGS(th) to avoid parasitic turn-on and enable 2021-10-27 unipolar restricted gate driving
- Reduced total gate charge QG for lower driving...