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AIMBG120R060M1 - Silicon Carbide MOSFET

General Description

Pin definition: Pin 1 - Gate Pin 2 - Kelvin sense contact Pin 3…7 - Source Tab - Drain Note: The source and sense pins are not exchangeable, their exchange might lead to malfunction Type AIMBG120R060M1 Package PG-TO263-7-HV-ND5.8 Marking AS60MM1 Datasheet

Key Features

  • VDSS = 1200 V at Tvj = -55175°C.
  • IDDC = 38 A at TC = 25°C.
  • RDS(on) = 60 mΩ at VGS = 20 V, Tvj = 25°C.
  • New performance-optimized chip technology (Gen1p) with improved RDSon.
  • A.
  • Best in class switching energy for lower switching losses and reduced cooling efforts.
  • Lowest device capacitances for higher switching speeds and higher power density.
  • A combination of low Crss/Ciss ratio and high VGS(th) to avoid parasitic turn-on and ena.

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Full PDF Text Transcription (Reference)

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AIMBG120R060M1 CoolSiC™ 1200 V SiC Trench MOSFET Final datasheet CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET PG-TO263-7-HV-ND5.8 Features • VDSS = 1200 V at Tvj = -55...175°C • IDDC = 38 A at TC = 25°C • RDS(on) = 60 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A • Best in class switching energy for lower switching losses and reduced cooling efforts • Lowest device capacitances for higher switching speeds and higher power density • A combination of low Crss/Ciss ratio and high VGS(th) to avoid parasitic turn-on and enable 2021-10-27 unipolar restricted gate driving • Reduced total gate charge QG for lower driving power and losses • Increased recommended turn-on voltage (VGS(on) = 20 V) for lower RDS(on) • .