Infineon Technologies AIMBG120R060M1
The source and sense pins are not exchangeable, their exchange might lead to malfunction Type AIMBG120R060M1 Package PG-TO263-7-HV-ND5.8 Marking AS60MM1 Datasheet Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 2024-03-26 AIMBG120R060M1 CoolSiC™ 1200 V SiC Trench MOSFET Table of contents Table of contents Description .| Part No. | AIMBG120R060M1 |
|---|---|
| Datasheet | AIMBG120R060M1 Download |
| Manufacturer |  Infineon Technologies |
| Description | Silicon Carbide MOSFET |
| Buy | Stock & Price |
FEATURES
● VDSS = 1200 V at Tvj = -55...175°C● IDDC = 38 A at TC = 25°C
● RDS(on) = 60 mΩ at VGS = 20 V, Tvj = 25°C
● New performance-optimized chip technology (Gen1p) with improved RDSon* A
● Best in class switching energy for lower switching losses and reduced cooling efforts
● Lowest device capacitances for higher switching speeds and higher power density
● A combination of low Crss/Ciss ratio and high VGS(th) to avoid parasitic turn-on and enable 2021-10-27 unipolar restricted gate driving
● Reduced total gate charge QG for lower driving power and losses
● Increased recommended turn-on voltage (VGS(on) = 20 V) for lower RDS(on)
● .XT die attach technology for best in class thermal performance
● Low package stray inductance for faster and cleaner switching
● Sense (Kelvin) source pin for better gate control and reduced switching losses
● Minimal creepage distance 5.85 mm (material group II) to fit 800 V applications without coating
● SMT package for automated assembly and reduced system costs TAB 1 234 5 6 7 Copyright © Infineon Technologies AG 2021.
