AUIRF7341Q Description
Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.
AUIRF7341Q Key Features
- Advanced Planar Technology
- Ultra Low On-Resistance
- Logic Level Gate Drive
- Dual N Channel MOSFET
- Surface Mount
- Available in Tape & Reel
- 175°C Operating Temperature
- Lead-Free, RoHS pliant
- Automotive Qualified