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Infineon Technologies Electronic Components Datasheet

AUIRF7341Q Datasheet

Dual N Channel MOSFET

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AUTOMOTIVE GRADE
AUIRF7341Q
Features
Advanced Planar Technology
Ultra Low On-Resistance
Logic Level Gate Drive
Dual N Channel MOSFET
Surface Mount
Available in Tape & Reel
175°C Operating Temperature
Lead-Free, RoHS Compliant
Automotive Qualified *
  S1
G1
S2
G2
1
2
3
4
8 D1
7 D1
6 D2
5 D2
Top View
Description
Specifically designed for Automotive applications, these HEXFET® Power
MOSFET's in a Dual SO-8 package utilize the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of these Automotive qualified HEXFET Power
MOSFET's are a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal characteristics and
dual MOSFET die capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
G
Gate
VDSS
RDS(on) typ.
max.
ID
SO-8
AUIRF7341Q
D
Drain
55V
0.043
0.050
5.1A
S
Source
Base part number
AUIRF7341Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF7341QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
EAS
IAR
EAR
TJ
TSTG
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Max.
55
5.1
4.2
42
2.4
1.7
16
± 20
140
5.1
See Fig.17, 18, 15a, 15b
-55 to + 175
Units
V
A 
W
mW/°C
V
mJ
A
mJ
°C 
Thermal Resistance  
Symbol
Parameter
RJA Junction-to-Ambient
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
Max.
62.5
Units
°C/W
2015-9-30


Infineon Technologies Electronic Components Datasheet

AUIRF7341Q Datasheet

Dual N Channel MOSFET

No Preview Available !

  AUIRF7341Q
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
55
–––
–––
–––
1.0
10.4
–––
–––
–––
–––
––– ––– V VGS = 0V, ID = 250µA
0.052 ––– V/°C Reference to 25°C, ID = 1mA
0.043 0.050
0.056 0.065

VGS
VGS
= 10V, ID = 5.1A
= 4.5V, ID = 4.42A
––– 3.0 V VDS = VGS, ID = 250µA
––– ––– S VDS = 10V, ID = 5.2A
––– 2.0
––– 25
µA
VDS =44V, VGS = 0V
VDS = 44V,VGS = 0V,TJ =150°C
––– 100
––– -100
nA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain Charge
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics  
––– 29 44
––– 2.9 4.4
––– 7.3 11
––– 9.2 –––
––– 7.7 –––
––– 31 –––
––– 12.5 –––
––– 780 –––
––– 190 –––
––– 66 –––
ID =5.2A
nC   VDS = 44V
VGS = 10V
VDD = 28V
ns
ID = 1.0A
RG = 6.0
VGS = 10V
VGS = 0V
pF   VDS = 25V
ƒ = 1.0MHz
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Min.
–––
–––
–––
–––
Typ.
–––
–––
–––
51
Max. Units
Conditions
2.4
42
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
1.2 V TJ = 25°C,IS = 2.6A,VGS = 0V 
77 ns TJ = 25°C ,IF = 2.6A,
Qrr Reverse Recovery Charge
––– 76 114 nC di/dt = 100A/µs 
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
VDD =25V, Starting TJ = 25°C, L = 10.7mH, RG = 25, IAS = 5.2A.
Pulse width 300µs; duty cycle 2%.
Surface mounted FR-4 board, t 10sec.
2 2015-9-30


Part Number AUIRF7341Q
Description Dual N Channel MOSFET
Maker Infineon
Total Page 10 Pages
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