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AUIRF7341Q - Dual N-Channel MOSFET

Description

Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Advanced Planar Technology.
  • Ultra Low On-Resistance.
  • Logic Level Gate Drive.
  • Dual N Channel MOSFET.
  • Surface Mount.
  • Available in Tape & Reel.
  • 175°C Operating Temperature.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •   S1 G1 S2 G2 1 2 3 4 8 D1 7 D1 6 D2 5 D2 Top View.

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Datasheet preview – AUIRF7341Q

Datasheet Details

Part number AUIRF7341Q
Manufacturer Infineon
File Size 403.32 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet AUIRF7341Q Datasheet
Additional preview pages of the AUIRF7341Q datasheet.

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Full PDF Text Transcription

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  AUTOMOTIVE GRADE AUIRF7341Q Features  Advanced Planar Technology  Ultra Low On-Resistance  Logic Level Gate Drive  Dual N Channel MOSFET  Surface Mount  Available in Tape & Reel  175°C Operating Temperature  Lead-Free, RoHS Compliant  Automotive Qualified *   S1 G1 S2 G2 1 2 3 4 8 D1 7 D1 6 D2 5 D2 Top View Description Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
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