AUIRF7769L2TR Datasheet - Infineon

Power MOSFET

AUIRF7769L2TR Features

* of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. Base Part Number Package Type Standard Pack Form Quantity

AUIRF7769L2TR General Description

The AUIRF7769L2TR combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET® package is compatible with existi.

AUIRF7769L2TR Datasheet (427.74 KB)