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Infineon Technologies Electronic Components Datasheet

AUIRF7769L2TR Datasheet

Power MOSFET

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AUTOMOTIVE GRADE
AUIRF7769L2TR
Advanced Process Technology
Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and Reliability
Lead free, RoHS and Halogen free
 Automotive Qualified *
Automotive DirectFET® Power MOSFET
V(BR)DSS
RDS(on) typ.
max.
ID (Silicon Limited)
Qg (typical)
100V
2.8m
3.5m
124A
200nC
 
D
S
S
GS
S
S
S
D
S
S
 
Applicable DirectFET® Outline and Substrate Outline
L8 DirectFET® ISOMETRIC
SB SC
M2 M4
L4 L6 L8
Description
The AUIRF7769L2TR combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to
achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET® package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual
sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET® packaging
platform coupled with the latest silicon technology allows the AUIRF7769L2TR to offer substantial system level savings and performance improvement
specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest
processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction
temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for
high current automotive applications.
Base Part Number  
Package Type  
Standard Pack
Form
Quantity
Orderable Part Number  
AUIRF7769L2
DirectFET Large Can
Tape and Reel
4000
AUIRF7769L2TR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TA = 25°C
EAS
IAR
EAR
TP
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Max.
100
±20
124
88
20
375
500
125
3.3
260
See Fig. 16, 17, 18a, 18b
270
-55 to + 175
Units
V
A
W
mJ
A
mJ
°C  
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1 2015-10-5


Infineon Technologies Electronic Components Datasheet

AUIRF7769L2TR Datasheet

Power MOSFET

No Preview Available !

  AUIRF7769L2TR
Thermal Resistance
Symbol
Parameter
RJA
RJA
RJA
RJ-Can
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can 
RJ-PCB
Junction-to-PCB Mounted
Linear Derating Factor
Typ.
–––
12.5
20
–––
–––
Max.
45
–––
–––
1.2
0.5
0.83
Units
°C/W  
W/°C
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
gfs
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
IDSS Drain-to-Source Leakage Current
100 ––– ––– V VGS = 0V, ID = 250µA
––– 0.02 ––– V/°C Reference to 25°C, ID = 2.0mA
––– 2.8 3.5 m VGS = 10V, ID = 74A
2.0 2.7 4.0 V
––– -10 ––– mV/°C VDS = VGS, ID = 250µA
410 ––– –––
––– ––– 20
––– ––– 250
S VDS = 25V, ID = 74A
µA
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100
––– ––– -100
nA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Symbol
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
––– 200 300
––– 30 –––
––– 9.0 –––
––– 110 165
––– 51 –––
––– 119 –––
––– 53 –––
––– 1.5 –––
––– 44 –––
––– 32 –––
––– 92 –––
––– 41 –––
––– 11560 –––
––– 1240 –––
––– 590 –––
––– 6665 –––
VDS = 50V
VGS = 10V
nC  
ID = 74A
See Fig.11
nC VDS = 16V, VGS = 0V

VDD = 50V, VGS = 10V
ns
ID = 74A
RG = 1.8
VGS = 0V
VDS = 25V
pF ƒ = 1.0 MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0 MHz
Coss Output Capacitance
––– 690 –––
VGS = 0V, VDS = 80V, ƒ = 1.0 MHz
Notes through are on page 3
2
2015-10-5


Part Number AUIRF7769L2TR
Description Power MOSFET
Maker Infineon
Total Page 11 Pages
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