BAT15-03W diode equivalent, single silicon rf schottky diode.
which frequencies are as high as 12 GHz.
Feature list
* Low inductance LS = 1.8 nH (typical)
* Low capacitance C.
This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-03W a suitable choice for mi.
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