BSB028N06NN3G Description
BSB028N06NN3 G OptiMOS™3 Power-MOSFET.
BSB028N06NN3G Key Features
- Optimized technology for DC/DC converters
- Excellent gate charge x R DS(on) product (FOM)
- Superior thermal resistance
- Dual sided cooling
- low parasitic inductance
- Low profile (<0.7mm)
- N-channel, normal level
- 100% avalanche tested
- Pb-free plating; RoHS pliant
- Qualified according to JEDEC1) for target