BSB027P03LX3G Datasheet | Infineon

Description Opti MOS™ P3 -30V products are class leading power P-Channel MOSFETs for highest power density and energy efficient solutions. Lowest on state resistance in small footprint packages make Opti MOS™ P3 -30V the best choice for the demanding requirements of load switch, high-side switch and battery management applications. Opti MOS™ P3 products are available in high performance packages to tackle your most challenging applications giving full flexibility in optimizing space, efficiency and cost. Features - - - - - - - - - - P-Channel MOSFET Very low on-resistance RDS(on) Qualified for consumer level application Pb-free plating; Ro HS pliant Halogen-free according to IEC61249-2-21 Double sided cooling patible with Direct FET® package MX footprint and outline1) 100% avalanche tested Low parasitic inductance Low profile (<0.7 mm) Applications - - - load switch high-side switch battery management Key Performance Parameters Value -30 2.7 142 108 75 Unit V mΩ A n C Related Links IFX Opti MOS webpage IFX Opti MOS product brief IFX Opti MOS spice models IFX Design tools Table 1 Parameter RDS(on),max QOSS Qg.typ Type BSB027P03LX3 G Package MG-WDSON-2 Marking 5003 1) Direct FET ® is a trademark of International Rectifier Corporation. BSB027P03LX3 GG uses Direct FET ® technology licensed from International Rectifier Corporation Preliminary Data Sheet 1.9, 2011-03-02 Free Datasheet http://../ Opti MOS™ Power-MOSFET BSB027P03LX3 G Maximum ratings at Tj = 25 °C, unless otherwise specified. Table 2 Parameter Continuous drain current Maximum ratings Symbol Min. ID Values Typ. Max. 142 90 27 Pulsed drain current2) Avalanche current, single pulse Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 3) Unit A Note / Test Condition VGS=10 V, TC=25 °C VGS=10 V, TC=100 °C VGS=10 V, TA=25 °C, Rth JA=45 K/W)1) TC=25 °C TC=25 °C ID,pulse IAS EAS VGS Ptot Tj,Tstg -20 -40 - 400...