BSB028N06NN3G
BSB028N06NN3G is n-Channel Power MOSFET manufactured by Infineon.
Features
- Optimized technology for DC/DC converters
- Excellent gate charge x R DS(on) product (FOM)
- Superior thermal resistance
- Dual sided cooling
- low parasitic inductance
Product Summary VDS RDS(on),max ID
60 2.8 90
Can PAKTM M MG-WDSON-2
- Low profile (<0.7mm)
- N-channel, normal level
- 100% avalanche tested
- Pb-free plating; Ro HS pliant
- Qualified according to JEDEC1) for target applications
- patible with Direct FET® package MN footprint and outline2)
V m W A
Type BSB028N06NN3 G
Package MG-WDSON-2
Outline MN
Marking 0106
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
V GS=10 V, T A=25 °C, R th JA=58 K/W2)
Pulsed drain current3)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=30 A, R GS=25 W
Gate source voltage
V...
