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BSB028N06NN3G - n-Channel Power MOSFET

Datasheet Summary

Features

  • Optimized technology for DC/DC converters.
  • Excellent gate charge x R DS(on) product (FOM).
  • Superior thermal resistance.
  • Dual sided cooling.
  • low parasitic inductance Product Summary VDS RDS(on),max ID 60 2.8 90 CanPAKTM M MG-WDSON-2.
  • Low profile (.

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Datasheet Details

Part number BSB028N06NN3G
Manufacturer Infineon
File Size 724.47 KB
Description n-Channel Power MOSFET
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BSB028N06NN3 G OptiMOS™3 Power-MOSFET Features • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • Dual sided cooling • low parasitic inductance Product Summary VDS RDS(on),max ID 60 2.8 90 CanPAKTM M MG-WDSON-2 • Low profile (<0.
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