BSC160N10NS3G Description
Type OptiMOSTM3 Power-Transistor Optimized for dc-dc conversion N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 150 °C operating temperature Pb-free lead plating; DIN IEC 68-1 Value 42 27 8.8 168 50 ±20 60 -55 ... 150 55/150/56 Unit A mJ V W.