* Increased blocking voltage capability to 650V
* Low inductive design
* Low Switching Losses
* Low VCEsat Mechanical Features
* Al2O3 Substrate with Low Thermal Resistance
* Compact design
* PressFIT Contact Technology
* Rugged mountin
F3L75R07W2E3_B11 Datasheet (816.02 KB)
F3L75R07W2E3_B11
816.02 KB
Igbt.
Technische Information / Technical Information IGBT-Module IGBT-modules F3L75R07W2E3_B11 EasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Cont.
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